KBP201 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
KBP201 Datasheet PDF : 3 Pages
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Typical Characteristics
FIG1:Io-Ta Curve
2.5
FIG2:Surge Forward Current Capadility
70
2.0
60
50
1.5
40
1.0
30
20
0.5
10
0
0
50
100
150
0
12
5
10 20
50
100
Ta(℃)
Number of Cycles
FIG3:Instantaneous Forward Voltage
60
40
20
10
5.0
1.0
0.5
0.2
0.1
0.4
0.6
0.8
1.0
1.2
100
10
1.0
0.1
1.4
VF(V)
0.01
0
FIG4:Typical Reverse Characteristics
Tj=125℃
Tj=25℃
20
40
60
80
100
Voltage(%)
High Diode Semiconductor
2
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