KBP201 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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KBP201 Datasheet PDF : 3 Pages
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KBP2005 THRU KBP210
KBP Plastic-Encapsulate Bridge Rectifier
Features
K BP
●Io
2.0A
●VRRM
50V-1000V
●High surge current capability
●Polarity: Color band denotes cathode
Applications
● General purpose 1 phase Bridge
rectifier applications
Marking
● K BP2XX
XX : From 005 To 10
Item
Symbol
Repetitive Peak Reverse Voltage
Average Rectified Output
Current
VRRM
IO
Unit
V
A
Conditions
KBP2
005 01 02 04 06 08 10
50 100 200 400 600 800 1000
60HZ sine wave, R- load, Ta=30℃
2
Surge(Non-repetitive)Forward
Current
IFSM
A
60HZ sine wave, 1 cycle, Ta=25℃
60
Current Squared Time
I2t
A2s 1ms≤t ＜ 8.3ms Tj=25℃,Rating of
per diode
15
Storage Temperature
Junction Temperature
Tstg
℃
Tj
℃
-55 ~+150
-55 ~+150
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Max
Peak Forward Voltage
VFM
V
IFM=2A, Pulse measurement, Rating of per diode
1.1
Peak Reverse Current
IRRM
μA
VRM=VRRM , Pulse measurement, Rating of per diode
10
RθJ-A
Between junction and ambient
30
Thermal Resistance(1)
℃/W
RθJ-L
Between junction and lead
11
Notes）:
（1）Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47×0.47”(12×12mm) copper
pads
High Diode Semiconductor
1
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