5L35021 Datasheet
Table 7. Electrical Characteristics–Input Parameters
Symbol
VIH
VIL
VIH
VIL
VSWING
IIL
IIH
dTIN
CIN
RPDR
ROUT
Parameter
Conditions
Input High Voltage
Input Low Voltage
Input High Voltage – OE
Single-ended inputs – OE pins.
Single-ended inputs – OE pins.
Single-ended input.
Input Low Voltage – OE
Single-ended input.
Input Amplitude – CLKIN
Single-ended input swing.
Input Leakage Low Current
Input Leakage High Current
Input Duty Cycle
VIN = GND
VIN = 1.89V.
Measurement from differential
waveform.
Input capacitance (CLKIN,
CLKINB, OE, SDA, SCL, DFC1:0).
Pull-down Resistor – OE pin
LVCMOS output driver impedance
(VDDSE = 1.8V)
Minimum
0.65 x VDDSE
GND - 0.3
0.65 x VDDSE
GND - 0.3
600
-20
-20
45
Typical
3
550
17
Maximum Units
VDDSE + 0.3 V
0.35 x VDDSE V
VDDSE + 0.3 V
0.35 x VDDSE V
VDD
mV
20
μA
20
μA
55
%
7
pF
kΩ
Ω
Table 8. DC Electrical Characteristics – LVCMOS
Symbol
VOH
VOL
IOZDD
tR/F
Parameter
Output High Voltage
Output Low Voltage
Output Leakage Current
Output Rise/Fall Time
Conditions
IOH = -8mA.
IOL = 8mA.
Tri-state outputs, VDDSE = 1.89V.
Single-ended LVCMOS output clock
rise and fall time, 20% to 80% of
VDDSE 1.8V.
Minimum
0.7 x VDDSE
Typical
1.0
Maximum
VDDSE
0.25 x VDDSE
3
Units
V
V
μA
ns
Table 9. Electrical Characteristics – LPHCSL Differential Outputs
Symbol
dV/dt
ΔdV/dt
VMAX
VMIN
VSWING
VCROSS
Parameter
Slew Rate
Slew Rate Mismatch
Maximum Voltage
Minimum Voltage
Voltage Swing
Crossing Voltage Value
Minimum
1
Typical
2.5
-150
0
-300
300
250
400
Maximum
4
20
1150
550
Units
V/ns
%
mV
mV
mV
mV
Notes
1,2,3,8
1,2,3,8,9
1,6
1,6
1,2,6
1,4,6
©2017 Integrated Device Technology, Inc.
7
July 13, 2017