1N4006 Просмотр технического описания (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED
Номер в каталоге
Компоненты Описание
производитель
1N4006 Datasheet PDF : 2 Pages
| |||
Plastic-Encapsulate Diodes
1.0 AMP. Surface Mount Rectifiers
FEATURES
M1---M7
For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
0
52 32
Easy pick and place
7 4.50
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0 260oC / 10 seconds at terminals
High reliability grade (AEC Q101 qualified)
htt MECHANICAL DATA
p Case: Molded plastic
: Terminals: Pure tin plated, lead free
// solderable per J-STD-002B and JESD22-B102D.
w Polarity: Indicated by cathode band
w Packaging: 12mm tapeper EIA STD RS-481
w. Weight: 0.064 gram
DO-214AC (SMA)
ma MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
k Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For
os capacitive load, derate current by 20%.
e Parameter
mi Maximum Repetitive Peak Reverse Voltage
. Maximum RMS Voltage
h Maximum DC Blocking Voltage
k/ Maximum Average Forward Rectified Current at
Symbols M1 M2 M3 M4 M5 M6 M7 Unit
VRRM 50 100 200 400 600 800 1000 V
VRMS 35
70 140 280 420 560 700 V
VDC
50 100 200 400 600 800 1000 V
I(A)
1
A
TL =100 OC
Peak Forward Surge Current 8.3ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
IFSM
30
A
mMeatxhiomdu)m Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
TA = 25 OC
at Rated DC Blocking Voltage
Typical Junction Capacitance 1)
Maximum Thermal Resistance 2)
TA = 125 OC
Operating and Storage Temperature Range
1) Measured at 1MHz and applied reverse voltage of 4 V
2) 8 mm2 (0.013 mm thick) land areas
VF
IR
CJ
RθJL
TJ, TS
1.1
5
200
15
30
- 50 to + 150
V
µA
pF
OC/W
OC
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
Share Link: 