M5M51008VP-10L Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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производитель
M5M51008VP-10L Datasheet PDF : 7 Pages
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1997-3/25
MITSUBISHI LSIs
M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L,
-55LL,-70LL,-10LL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min Typ Max
Unit
VCC (PD)
VI (S1)
Power down supply voltage
Chip select input S1
VI (S2)
Chip select input S2
2.2V ≤ Vcc(PD)
2V ≤ Vcc(PD) ≤2.2V
4.5V ≤ Vcc(PD)
Vcc(PD) < 4.5V
2
V
2.2
V
Vcc(PD)
0.8
V
0.2
ICC (PD) Power down supply current
VCC = 3V
1) S2 ≤ 0.2V, other inputs = 0~3V
-L
2) S1 ≥ VCC - 0.2V,S2 ≥ VCC - 0.2V -LL
other inputs = 0~3V
50
µA
0.3
10
(Note 7)
Note7: ICC (PD) = 1µA in case of Ta = 25°C
(2) TIMING REQUIREMENTS (Ta = 0~70°C, unless otherwise noted )
Symbol
tsu (PD)
trec (PD)
Parameter
Power down set up time
Power down recovery time
Test conditions
Limits
Min Typ Max
Unit
0
ns
5
ms
(3) POWER DOWN CHARACTERISTICS
S1 control mode
VCC
S1
S2 control mode
VCC
S2
2.2V
t su (PD)
4.5V
4.5V
S1 ≥ VCC - 0.2V
t rec (PD)
2.2V
t su (PD)
0.2V
4.5V
4.5V
t rec (PD)
S2 ≤ 0.2V
0.2V
7
MITSUBISHI
ELECTRIC
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