BAV170 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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производитель

BAV170

Low-leakage Double Diode

Shenzhen Luguang Electronic Technology Co., Ltd 

BAV170

Low-leakage Double Diode

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Typ

MAX UNIT Test Condition

Forward Voltage

VF

900

1000

mV

1100

1250

IF=1mA

IF=10mA

IF=50mA

IF=100mA

Reverse Leakage Current

IR

Junction Capacitance

Cj

Reverse Recovery Time

trr

5

VR=75V

nA

80

VR=75V,TJ=150℃

2.0

pF

VR=0V,f=1.0MHz

3

μs

IF=IR=10mA,Irr=0.1*IR

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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