TDA75610LVPDTR Просмотр технического описания (PDF) - STMicroelectronics

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TDA75610LVPDTR

4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation

STMicroelectronics 

TDA75610LV

Electrical specifications

3.3

Electrical characteristics

Refer to the test circuit, VS = 14.4 V; RL = 4 Ω; f = 1 kHz; GV = 26 dB; Tamb = 25 °C; unless

otherwise specified.

Tested at Tamb = 25 °C and Thot = 105 °C; functionality guaranteed for Tj = -40 °C to 150 °C.

Symbol

Table 5. Electrical characteristics

Parameter

Test condition

Min. Typ. Max. Unit

General characteristics

VS Supply voltage range

RL = 4 Ω

6

RL = 2 Ω

6

Id

Total quiescent drain current

-

-

RIN Input impedance

-

45

IB1(D7) = 1

7

Signal attenuation -6 dB

VAM Min. supply mute threshold

IB1(D7) = 0 (default);(2)

5

Signal attenuation -6 dB

VOS

Vdth

ISB

SVR

Offset voltage

Dump threshold

Standby current

Supply voltage rejection

TON

Turn on timing (Mute play

transition)

Mute & play

-

Vstandby = 0

f = 100 Hz to 10 kHz; Vr = 1 Vpk;

Rg = 600 Ω

-80

18.5

-

60

D2/D1 (IB1) 0 to 1

-

TOFF

Turn off timing (Play mute

transition)

D2/D1 (IB1) 1 to 0

-

THWARN1

Average junction temperature for

TH warning 1

DB1 (D7) = 1

-

THWARN2

Average junction temperature for

TH warning 2

DB4 (D7) = 1

-

THWARN3

Average junction temperature for

TH warning 3

DB4 (D6) = 1

-

-

18

-

16 (1)

V

165 250 mA

60

70 kΩ

-

8

V

-

5.8

0

80 mV

-

20.5 V

1

5

μA

70

-

dB

25

50 ms

25

50 ms

160

-

145

-

°C

125

-

Audio performances

PO Output power

Max. power(3) Vs = 15.2 V, RL = 4 Ω

-

45

-

W

THD = 10 %, RL = 4 Ω

THD = 1 %, RL = 4 Ω

23

25

W

-

-

22

W

RL = 2 Ω; THD 10 %

44

W

RL = 2 Ω; THD 1 %

-

33

-

W

RL = 2 Ω; Max. power(3) Vs = 14.4 V

64

W

Max power@ Vs = 6 V, RL = 4 Ω

-

5

-

W

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