B595 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

B595

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB595

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

V(BR)EBO Emitter-base breakdown votage

IE=-10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A

VBE

Base-emitter on voltage

IC=-4A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-4A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

MIN TYP. MAX UNIT

-100

V

-5

V

-2.0

V

-1.5

V

-100 µA

-1

mA

40

240

20

5

MHz

270

pF

hFE-1 classifications

R

O

Y

40-80

70-140 120-240

2

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