Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5382
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
550
V
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6 A
1.0
V
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6 A
1.5
V
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
VCB=1200V; IE=0
VCE=550V; IB=0
VEB=9V; IC=0
0.1
mA
0.1
mA
0.1
mA
hFE-1
DC current gain
IC=3A ; VCE=5V
10
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUTOR Switching times
ton
Turn-on time
ts
Storage time
IC=1mA ; VCE=5V
10
1.3
IC=3A;IB1=0.6A ;IB2=1.2A
RL=50Ω;VBB2=4V
4.0
μs
μs
tf
Fall time
0.3
μs
2