Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5382
DESCRIPTION
·With TO-220F package
·High Voltage
·High speed switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
VCEO
VEBO
IC
固IN电C半H导AN体GE SEMICONDUTOR Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open emitter
Open base
Open collector
1200
550
9
6
V
V
V
A
ICM
Collector current-peak
12
A
IB
Base current
3
A
IBM
Base current-peak
6
A
PT
Total power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
MAX
3.13
UNIT
℃/W