SI2302 Просмотр технического описания (PDF) - ZP Semiconductor

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SI2302

N-Channel Enhancement Mode MOSFET

ZP Semiconductor 

SI2302

Feature

 16V/3.6A, RDS(ON) = 100mΩ(MAX) @VGS = 4.5V.

RDS(ON) = 140mΩ(MAX) @VGS = 2.5V.

 Super High dense cell design for extremely low RDS(ON) .

 Reliable and Rugged.

 SOT-23 for Surface Mount Package.

N-Channel Enhancement Mode MOSFET

SOT-23

Applications

● Power Management

Portable Equipment and Battery Powered Systems.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

TA=25℃Unless Otherwise noted

Symbol

VDS

VGS

ID

Electrical Characteristics

TA=25℃Unless Otherwise noted

Parameter

Symbol

Test Conditions

Off Characteristics

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

Zero-Gate Voltage Drain Current

IDSS

VDS=12V, VGS=0V

Gate Body Leakage Current, Forward

IGSSF

VGS=8V, VDS=0V

Gate Body Leakage Current, Reverse

IGSSR

VGS=-8V, VDS=0V

On Characteristics

Gate Threshold Voltage

VGS(th)

VGS= VDS, ID=250µA

Static Drain-source

RDS(ON)

VGS =4.5V, ID =3.6A

On-Resistance

VGS =2.5V, ID =3.1A

Drain-Source Diode Characteristics and Maximum Ratings

Drain-Source Diode Forward Voltage

VSD

VGS =0V, IS=0.94A

Limit

16

±8

3.6

Units

V

V

A

Min Typ. Max Units

16

-

-

V

-

-

1

μA

-

-

100

nA

-

-

-100

nA

0.4

-

1.3

V

-

70

100

mΩ

-

75

140

mΩ

1.2

V

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