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BCY72 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге
Компоненты Описание
производитель
BCY72
NJSEMI
New Jersey Semiconductor NJSEMI
BCY72 Datasheet PDF : 3 Pages
1 2 3
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BCY70
BCY71/BCY72
GENERAL PURPOSE APPLICATIONS
DESCRIPTION
The BCY70, BCY71 and BCY72 are silicon planar
epitaxial PNP transistors in Jedec TO-18 metaJ
case.
Ok.
TO-18
INTERNAL SCHEMATIC DIAGRAM
PNP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-base Voltage (IE = 0)
VCEO Collector-emitter Voltage (le = 0)
VEBO Emitter-base Voltage (Ic = 0}
ICM
Collector Peak Current
Ptol
Total Power Dissipation at Tam6 s 25 °C
Tsto, T, Storage and Junction Temperature
Pulsed : pulse duration = 300 us. duty cyde = 1 %.
BCY70
-50
-40
Value
BCY71 BCY72
-45
-25
-45
-25
-5
-200
350
- 65 to 200
Unit
V
V
V
mA
mW
:C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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