BUX84F Просмотр технического описания (PDF) - Philips Electronics

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BUX84F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUX84F; BUX85F

(1)

(2)

(3)

(4)

4

handbook, full pagewidth

VCEsat

(V)

3

MGB908

2

1

0

0

0.05

0.1

0.15

0.2

0.25

IB (A)

0.3

(1) IC = 0.3 A. (2) IC = 0.5 A. (3) IC = 0.7 A. (4) IC = 1 A.

Tj = 25 °C; solid line: typical values; dotted line: maximum values.

Fig.4 Collector-emitter saturation voltage as a function of base current; typical values.

1.0

handbook, halfpage

VBEsat

(V)

0.75

MGB904

(1)

(2)

(3)

102

handbook, halfpage

hFE

10

MGB879

typ

0.5

0

100

200 IB (mA) 300

Tj = 25 °C.

(1) IC = 1 A.

(2) IC = 0.5 A.

(3) IC = 0.3 A.

Fig.5 Base-emitter saturation voltage as a

function of emitter current; typical values.

1997 Aug 14

5

1

10−2

10−1

1

IC (A) 10

Fig.6 DC current gain; typical values.

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