BUX84F Просмотр технического описания (PDF) - Philips Electronics
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BUX84F Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUX84F; BUX85F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
BUX84F
BUX85F
VCEO
collector-emitter voltage
BUX84F
BUX85F
IC
collector current (DC)
ICM
collector current (peak value)
IB
base current (DC)
IBM
base current (peak value)
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
VBE = 0
open base
Th ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−
−
−65
−
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
MAX.
800
1 000
400
450
2
3
0.75
1
18
+150
150
UNIT
V
V
V
V
A
A
A
A
W
°C
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCEOsust
VCEsat
VBEsat
ICES
IEBO
hFE
fT
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
BUX84
L = 25 mH; see Figs 2 and 3
BUX85
collector-emitter saturation voltage IC = 0.3 A; IB = 30 mA;
see Fig.4
IC = 1 A; IB = 200 mA;
see Fig.4
base-emitter saturation voltage
IC = 1 A; IB = 200 mA;
see Fig.5
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
VCE = VCESmax; VBE = 0
VCE = VCESmax; VBE = 0;
Tj = 125 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 A; see Fig.6
VCE = 5 V; IC = 100 mA;
see Fig.6
transition frequency
VCE = 10 V; IC = 200 mA;
f = 1 MHz
MIN.
400
450
−
−
−
−
−
−
15
20
−
TYP.
−
−
−
−
−
−
−
−
−
50
20
MAX. UNIT
−
V
−
V
0.8
V
1
V
1.1
V
0.2
mA
1.5
mA
1
mA
−
100
−
MHz
1997 Aug 14
3
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