BUX85 Просмотр технического описания (PDF) - Power Innovations
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BUX85 Datasheet PDF : 7 Pages
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NPN SILICON POWER TRANSISTOR
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter
VCEO(sus) sustaining voltage
IC = 0.1 A L = 25 mH
(see Note 2)
400
V
ICES
IEBO
Collector-emitter
cut-off current
Emitter cut-off
current
VCE = 800 V
VCE = 800 V
VEB = 5 V
VBE = 0
VBE = 0
IC = 0
TC = 125°C
0.2
mA
1
1
mA
Forward current
hFE
transfer ratio
VCE = 5 V IC = 0.1 A
(see Notes 3 and 4)
35
VCE(sat)
VBE(sat)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
IB = 0.03 A IC = 0.3 A
IB = 0.2 A IC = 1 A
IB = 0.2 A IC = 1 A
(see Notes 3 and 4)
(see Notes 3 and 4)
0.8
V
1
1.1
V
Current gain
ft
bandwidth product
VCE = 10 V IC = 0.2 A
12
MHz
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
60
pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
5. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS †
ton
Turn on time
ts
Storage time
tf
Fall time
tf
Fall time
IC = 1 A
VCC = 250 V
IC = 1 A
VCC = 250 V
IB(on) = 0.2 A
IB(off) = -0.4 A
(see Figures 1 and 2)
IB(on) = 0.2 A
TC = 95°C
IB(off) = -0.4 A
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.25 0.5
µs
1.8
µs
0.2
µs
0.4
µs
PRODUCT INFORMATION
2
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