BUX85 Просмотр технического описания (PDF) - Power Innovations

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BUX85

NPN SILICON POWER TRANSISTOR

Power Innovations 

Copyright © 1997, Power Innovations Limited, UK

NPN SILICON POWER TRANSISTOR

AUGUST 1978 - REVISED MARCH 1997

q 40 W at 25°C Case Temperature

q 2 A Continuous Collector Current

q 3 A Peak Collector Current

q Typical tf = 200 ns at 25°C

TO-220 PACKAGE

(TOP VIEW)

B

1

C

2

E

3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

Collector-base voltage (IE = 0)

Collector-emitter voltage (VBE = 0)

Collector-emitter voltage (IB = 0)

Continuous collector current

Peak collector current (see Note 1)

Continuous device dissipation at (or below) 25°C case temperature

Operating junction temperature range

Storage temperature range

NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

SYMBOL

VCBO

VCES

VCEO

IC

ICM

Ptot

Tj

Tstg

VALUE

800

800

400

2

3

40

-65 to +150

-65 to +150

UNIT

V

V

V

A

A

W

°C

°C

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

1

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