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IRF710 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
IRF710
Iscsemi
Inchange Semiconductor Iscsemi
IRF710 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
isc Product Specification
IRF710
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
2
A
IDM
Drain Current-Single Plused
5
A
PD
Total Dissipation @TC=25
36
W
Tj
Max. Operating Junction Temperature -55~150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.5
/W
Rth j-a Thermal Resistance,Junction to Ambient
80
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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