IRF710 Просмотр технического описания (PDF) - Intersil
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IRF710 Datasheet PDF : 7 Pages
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IRF710
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS = CGD
COSS ≈ CDS + CGS
300
CISS
200
COSS
100
CRSS
0
1
2
5
10
2
5
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.6
1.2
0.8
TJ = 25oC
TJ = 150oC
0.4
0
0
0.4
0.8
1.2
1.6
2.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10
PULSE DURATION = 80µs
5 DUTY CYCLE = 0.5% MAX
2
1
5
TJ = 150oC
2
0.1
5
TJ = 25oC
2
10-2
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 2.0A
16
VDS = 80V
12
VDS = 200V
8
VDS = 320V
4
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-224
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