DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IRF710 Просмотр технического описания (PDF) - Intersil

Номер в каталоге
Компоненты Описание
производитель
IRF710 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF710
Typical Performance Curves Unless Otherwise Specified (Continued)
102
OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)
10
1
0.1
TC = 25oC
TJ = MAX RATED
10-2 SINGLE PULSE
1
10
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
10ms
DC
103
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
3.0
10V 6.0V
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
5.5V
1.8
VGS = 5.0V
1.2
0.6
0
0
4.5V
4.0V
40
80
120
160
200
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4
1.8
1.2
10V
6.0V
5.5V
VGS = 5.0V
0.6
0
0
4.5V
4.0V
3
6
9
12
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS 50V
1
TJ = 150oC
TJ = 25oC
0.1
10-2
0
2
4
6
8
10
VSD, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
24
18
VGS = 10V
12
6
VGS = 20V
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-223
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4 ID = 2.0A, VGS = 10V
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]