IRF710 Просмотр технического описания (PDF) - Intersil
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IRF710 Datasheet PDF : 7 Pages
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IRF710
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD Modified MOSFET
Symbol Showing the
D
Pulse Source to Drain Current
ISDM Integral Reverse
(Note 3)
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
2.0
A
-
-
5.0
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 2.0A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs
-
-
110
-
0.40
-
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 53µH, RG = 25Ω, peak IAS = 2A.
1.6
V
520 ns
1.4 µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.0
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.02
0.1 0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
PDM
tt12t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-222
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