IRF710 Просмотр технического описания (PDF) - Intersil

Номер в каталоге

Компоненты Описание

производитель

IRF710

2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

Intersil 

IRF710

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRF710

400

400

2

1.2

5

±20

36

0.29

120

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

BVDSS VGS = 0V, ID = -250µA (Figure 10)

400

Gate to Threshold Voltage

VGS(TH) VGS = VDS, ID = 250µA

2.0

Zero-Gate Voltage Drain Current

IDSS VDS = Rated BVDSS, VGS = 0V

-

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

-

On-State Drain Current (Note 2)

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

2.0

Gate to Source Leakage Forward

IGSS VGS = ±20V

-

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 1.1A (Figures 8, 9)

-

Forward Transconductance (Note 2)

gfs

VDS ≥ 10V, ID = 1.2A (Figure 12)

1.0

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

tD(ON) VDD = 50V, ID ≈ 5.6A, RG = 24Ω, RL = 8.9Ω,

-

tr

VGS = 10V

MOSFET Switching Times are Essentially

-

tD(OFF) Independent of Operating Temperature

-

Fall Time

tf

-

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Qg(TOT) VGS = 10V, ID = 2.0A, VDS = 0.8 x Rated BVDSS

-

Ig(REF) = 1.5mA (Figure 14)

Qgs

Gate charge is Essentially Independent of Operating

Temperature

-

Qgd

-

Input Capacitance

CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

Output Capacitance

COSS

-

Reverse-Transfer Capacitance

CRSS

-

Internal Drain Inductance

LD

Measured From the

Modified MOSFET

-

Contact Screw on Tab to Symbol Showing the

Center of Die

Internal Device’s

Measured From the Drain Inductances

-

Lead, 6mm (0.25in) From

D

Package to Center of Die

LD

Internal Source Inductance

LS

Measured From the

-

Source Lead, 6mm

G

(0.25in) From Header to

LS

Source Bonding Pad

S

Thermal Resistance Junction to Case

RθJC

-

Thermal Resistance Junction to Ambient RθJA Free Air Operation

-

TYP MAX UNITS

-

-

V

-

4.0

V

-

250

µA

- 1000 µA

-

-

A

- ±500 nA

3.3 3.6

Ω

1.5

-

S

8.0 12

ns

10 15

ns

21 32

ns

11 17

ns

7.0 12

nC

1.2

-

nC

4.0

-

nC

135

-

pF

35

-

pF

8.0

-

pF

3.5

-

nH

4.5

-

nH

7.5

-

nH

-

3.5 oC/W

-

62.5 oC/W

4-221

Share Link: