IRFU9214 Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.

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производитель

IRFU9214

Power MOSFET

Kersemi Electronic Co., Ltd. 

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

400

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

300

Ciss

200

100

Coss

Crss

0

1

10

100

-VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

10

TJ = 150°C

1

TJ = 25°C

0.1

1.0

VGS = 0 V

2.0

3.0

4.0

5.0

VSD,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = -1.7 A

16

12

VDS =-200V

VDS =-125V

VDS =-50V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

3

6

9

12

15

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10

100us

1

1ms

TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

10

10ms

100

1000

-VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

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4

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