ACE4953BFM-H Просмотр технического описания (PDF) - ACE Technology Co., LTD.

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ACE4953BFM-H

Dual P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE4953B

Dual P-Channel Enhancement Mode Field Effect Transistor

Description

The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge. This device is suitable for use as a load switch or in PWM applications.

Features

 VDS(V)=-20V

 ID=-5.5A (VGS=-10V)

 RDS(ON)<55mΩ (VGS=-10V)

 RDS(ON)<58mΩ (VGS=-4.5V)

 RDS(ON)<80mΩ (VGS=-2.5V)

Absolute Maximum Ratings

Parameter

Symbol Max Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Continuous) * AC TA=25 OC

TA=70 OC

VDSS

VGSS

ID

-20 V

±12 V

-5.5

A

-4.4

Drain Current (Pulse) * B

IDM

-25 A

Power Dissipation

TA=25 OC

TA=70 OC

PD

2

W

1.5

Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC

Packaging Type

SOP-8

VER 1.2 1

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