ACE9435B Просмотр технического описания (PDF) - ACE Technology Co., LTD.

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ACE9435B

P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE9435B

P-Channel Enhancement Mode Field Effect Transistor

Description

This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench

technology, which is especially used to minimize on-state resistance. This device is particularly suited for

low voltage application such as portable equipment, power management and other battery powered

circuits, and low in-line power loss are needed in a very small outline surface mount package.

Features

 VDS(V)=-320V, ID=-5.24.1A

 RDS(ON)=51mΩ @ VGS=-10V

 RDS(ON)=68mΩ @ VGS=-4.5V

 High density cell design for low RDS(ON)

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

Continuous TA=25 OC

Pulsed (Note 2)

Total Power Dissipation (Note 1)

Operating and Storage Temperature Range

Symbol Max Unit

VDSS

VGSS

-30 V

±20 V

-5.2

ID

A

-50

PD

1.5 W

TJ,TSTG -55 to 150 OC

Packaging Type

SOP-8

8

7

6

5

1

2

3

4

VER 1.2 1

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