ACE4441B Просмотр технического описания (PDF) - ACE Technology Co., LTD.
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ACE4441B Datasheet PDF : 6 Pages
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ACE4441B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4441B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-60V
ID=-4A (VGS=-10V)
RDS(ON)＜75mΩ (VGS=-10V)
RDS(ON)＜90mΩ (VGS=-4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
TA=25 OC
TA=70 OC
Drain Current (Pulse) * B
Power Dissipation
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Packaging Type
SOP-8
Symbol Max Unit
VDS
-60 V
VGS
±20 V
-4
ID
-3.2 A
IDM
-20
3
PD
W
2.1
TJ,TSTG -55 to 150 OC
Ordering information
ACE4441B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2 1
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