SB620FCT-LF Просмотр технического описания (PDF) - Won-Top Electronics
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SB620FCT-LF Datasheet PDF : 4 Pages
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WTE
POWER SEMICONDUCTORS
SB620FCT – SB660FCT Pb
6.0A DUAL SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
B
! Guard Ring for Transient Protection
! Low Forward Voltage Drop
C
! Low Reverse Leakage Current
! High Surge Current Capability
G
A
! Plastic Material has UL Flammability
Classification 94V-O
PIN1 2 3
D
Mechanical Data
! Case: ITO-220, Full Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 2.24 grams (approx.)
! Mounting Position: Any
! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
E
P
I
H
L
J
K
ITO-220
Dim
Min
Max
A
14.60
15.40
B
9.70
10.30
C
2.55
2.85
D
3.56
4.16
E
13.00
13.80
F
0.30
0.90
G
3.00 Ø 3.50 Ø
H
6.30
6.90
I
4.20
4.80
J
2.50
2.90
K
0.36
0.80
L
2.90
3.30
P
2.29
2.79
All Dimensions in mm
PIN 1 -
PIN 3 -
+
PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol SB620FCT SB630FCT SB640FCT SB650FCT SB660FCT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
20
30
40
50
60
V
VR
VR(RMS)
14
21
28
35
42
V
Average Rectified Output Current @TC = 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@IF = 3.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
IO
IFSM
VFM
IRM
Cj
Tj, TSTG
6.0
A
75
A
0.55
0.70
V
0.2
15
mA
400
pF
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB620FCT – SB660FCT
1 of 4
© 2006 Won-Top Electronics
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