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PBSS5220V

20 V, 2 A PNP low VCEsat (BISS) transistor

NXP Semiconductors. 

PBSS5220V

20 V, 2 A PNP low VCEsat (BISS) transistor

Rev. 03 — 14 December 2009

Product data sheet

1. Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface

Mounted Device (SMD) plastic package.

NPN complement: PBSS4220V.

1.2 Features

„ Low collector-emitter saturation voltage VCEsat

„ High collector current capability: IC and ICM

„ High collector current gain (hFE) at high IC

„ High efficiency due to less heat generation

„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

„ DC-to-DC conversion

„ MOSFET gate driving

„ Motor control

„ Charging circuits

„ Low power switches (e.g. motors, fans)

„ Portable applications

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

VCEO

IC

ICM

RCEsat

collector-emitter voltage

collector current

peak collector current

collector-emitter

saturation resistance

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

Conditions

open base

tp ≤ 300 μs

IC = −1 A;

IB = −100 mA

Min Typ Max

Unit

-

-

−20

V

-

-

−2

A

-

-

−4

A

[1] -

140 210

mΩ

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