PBSS301NZ-115 Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSS301NZ-115 Datasheet PDF : 14 Pages
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NXP Semiconductors
8. Test information
IB
90 %
10 %
IC
90 %
PBSS301NZ
12 V, 5.8 A NPN low VCEsat (BISS) transistor
IBon (100 %)
input pulse
(idealized waveform)
IBoff
output pulse
(idealized waveform)
IC (100 %)
10 %
td
tr
ton
Fig 13. BISS transistor switching time definition
ts
toff
t
tf
006aaa003
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A
Fig 14. Test circuit for switching times
mlb826
PBSS301NZ_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
9 of 14
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