PBSS301NZ-135 Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSS301NZ-135 Datasheet PDF : 14 Pages
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NXP Semiconductors
PBSS301NZ
12 V, 5.8 A NPN low VCEsat (BISS) transistor
1
VCEsat
(V)
10−1
10−2
006aaa566
(1)
(2)
(3)
1
VCEsat
(V)
10−1
(1)
10−2
(2)
006aaa567
10−3
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
102
RCEsat
(Ω)
10
006aaa569
1
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
(3)
10−3
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
10
(1)
(2)
(3)
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1
10−1
10−2
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS301NZ_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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