PBSS301NZ-115 Просмотр технического описания (PDF) - NXP Semiconductors.
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PBSS301NZ-115 Datasheet PDF : 14 Pages
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NXP Semiconductors
PBSS301NZ
12 V, 5.8 A NPN low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aaa562
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
1 0.01
0
006aaa563
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS301NZ_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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