PBSS301NZ-115 Просмотр технического описания (PDF) - NXP Semiconductors.

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PBSS301NZ-115

12 V, 5.8 A NPN low VCEsat (BISS) transistor

NXP Semiconductors. 

PBSS301NZ

12 V, 5.8 A NPN low VCEsat (BISS) transistor

Rev. 02 — 17 November 2009

Product data sheet

1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS301PZ.

1.2 Features

„ Low collector-emitter saturation voltage VCEsat

„ High collector current capability IC and ICM

„ High collector current gain (hFE) at high IC

„ High efficiency due to less heat generation

„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

„ DC-to-DC conversion

„ MOSFET gate driving

„ Motor control

„ Charging circuits

„ Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

VCEO collector-emitter voltage

IC

collector current

ICM

peak collector current

RCEsat collector-emitter

saturation resistance

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

Conditions

open base

single pulse;

tp ≤ 1 ms

IC = 4 A;

IB = 200 mA

Min Typ Max

Unit

-

-

12

V

-

-

5.8

A

-

-

11.6

A

[1] -

30

43

mΩ

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