F240 Просмотр технического описания (PDF) - New Jersey Semiconductor
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F240 Datasheet PDF : 2 Pages
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,J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BF240, BF241
NPN Silicon Epitaxial Planar Transistors
designed for emitter-grounded AM and FM amplifier stages
I*
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
max. Q5 #
Plastic case = JEDEC TO-92
TO-18 compatible
The case is impervious to light
Weight approximately 0.18 g
Dimensions in mm
Absolute Maximum Ratings
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
lo
IB
P«
T]
Ts
Value
Unit
40
V
40
V
4
V
25
mA
2
mA
3001'
mW
150
CC
-55 .. . +150
'C
" Valid provided that leads are kept at ambient temperature at a distance ot 2 mm from case
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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