MJE3055 Просмотр технического описания (PDF) - WEJ ELECTRONIC CO.

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Компоненты Описание

производитель

MJE3055

TRANSISTOR (NPN)

WEJ ELECTRONIC CO. 

RoHS

MJE3055

MJE3055 TRANSISTOR (NPN)

D FEATURES

Power dissipation

T PCM:

2 W (Tamb=25℃)

.,L Collector current

ICM:

10 A

Collector-base voltage

O V(BR)CBO:

70 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

N Collector-base breakdown voltage

O Collector-emitter breakdown voltage

Emitter-base breakdown voltage

R Collector cut-off current

T Collector cut-off current

C Emitter cut-off current

E DC current gain

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE(1)

hFE(2)

EL Collector-emitter saturation voltage

VCE(sat)

J Base-emitter voltage

VBE

WETransition frequency

fT

Test conditions

Ic=1mA, IE=0

Ic=200mA, IB=0

IE=1mA, IC=0

VCB=70V, IE=0

VCE=30V, IE=0

VEB=5V, IC=0

VCE=4V, IC=4A

VCE=4V, IC=10A

IC=4A, IB=400mA

IC=10A, IB=3.3A

VCE=4V, IC=4A

VCE=10V, IC=500mA

MIN TYP MAX UNIT

70

V

60

V

5

V

1

mA

0.7 mA

5

mA

20

100

5

1.1 V

8

V

1.8 V

2

MHz

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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