MJE13009 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MJE13009

12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS

ON Semiconductor 

MJE13009

Table 1. Test Conditions for Dynamic Performance

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

5V

PW

DUTY CYCLE ≤ 10% 68

tr, tf ≤ 10 ns

+5 V

0.001 mF

1N4933 33

MJE210

33 1N4933

2N2222

1

k

1

+5 Vk

RB

IB

VCC

L

IC

1N4933

NOTE

0.02 mF 270

PW and VCC Adjusted for Desired IC

RB Adjusted for Desired IB1

1k

2N2905

47 100

1/2 W

D.U.T.

MJE200

− VBE(off)

MR826*

Vclamp

*SELECTED FOR ≥ 1 kV

5.1 k

VCE

51

Coil Data:

Ferroxcube Core #6656

Full Bobbin (~16 Turns) #16

GAP for 200 mH/20 A

Lcoil = 200 mH

IC

ICM

t1

VCE

VCEM

TIME

OUTPUT WAVEFORMS

tf CLAMPED

tf UNCLAMPED ≈ t2

t

tf

t1 ADJUSTED TO

OBTAIN IC

t1 ≈

Lcoil (ICM)

VCC

Vclamp

t2

t2 ≈

Lcoil (ICM)

Vclamp

VCC = 20 V

Vclamp = 300 Vdc

Test Equipment

Scope−Tektronics

475 or Equivalent

RESISTIVE

SWITCHING

+125 V

RC

TUT

RB

SCOPE

D1

−4.0

V

VCC = 125 V

RC = 15 W

D1 = 1N5820 or Equiv.

RB = W

+10 V

25 ms

0

−8 V

tr, tf < 10 ns

Duty Cycle = 1.0%

RB and RC adjusted

for desired IB and IC

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