HVD141 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HVD141

Silicon Epitaxial Planar Pin Diode for Antenna Switching

Hitachi -> Renesas Electronics 

HVD141

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

Symbol

VR

IF

Pd

Tj

Tstg

Value

Unit

30

V

100

mA

150

mW

125

°C

−55 to +125

°C

Electrical Characteristics(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Reverse current

IR

— — 0.1 µA VR = 30 V

Forward voltage

VF

— — 1.0 V

IF = 10 mA

Capacitance

C

— — 0.82 pF VR = 1 V, f = 1 MHz

Forward resistance rf

— — 0.8 Ω

IF = 10 mA, f = 100 MHz

Note: Please do not use the soldering iron due to avoid high stress to the SFP package.

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