2N6050 Просмотр технического описания (PDF) - Central Semiconductor
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2N6050 Datasheet PDF : 2 Pages
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2N6050 2N6051 2N6052 PNP
2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6050, 2N6057
series types are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N6050
2N6057
60
60
2N6051
2N6058
80
80
5.0
12
20
0.2
150
-65 to +200
1.17
2N6052
2N6059
100
100
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA, (2N6050, 2N6057)
60
BVCEO
IC=100mA, (2N6051, 2N6058)
80
BVCEO
IC=100mA, (2N6052, 2N6059)
100
VCE(SAT) IC=6.0A, IB=24mA
VCE(SAT) IC=12A, IB=120mA
VBE(SAT) IC=12A, IB=120mA
VBE(ON)
VCE=3.0V, IC=6.0A
hFE
VCE=3.0V, IC=6.0A
750
hFE
VCE=3.0V, IC=12A
100
hfe
VCE=3.0V, IC=5.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=5.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz (PNP types)
Cob
VCB=10V, IE=0, f=100kHz (NPN types)
MAX
0.5
5.0
1.0
2.0
2.0
3.0
4.0
2.8
18K
500
300
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
MHz
pF
pF
R1 (18-September 2012)
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