BD243C Просмотр технического описания (PDF) - Power Innovations
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BD243C Datasheet PDF : 6 Pages
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BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
Collector-emitter
ICES cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 30 mA
(see Note 5)
VCE = 55 V
VCE = 70 V
VCE = 90 V
VCE = 115 V
VCE = 30 V
VCE = 60 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 1 A
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = 0.3 A
IC = 3 A
IC = 6 A
IC = 6 A
IC = 0.5 A
IC = 0.5 A
BD243
45
BD243A
60
BD243B
80
BD243C
100
BD243
0.4
BD243A
0.4
BD243B
0.4
BD243C
0.4
BD243/243A
0.7
BD243B/243C
0.7
1
30
(see Notes 5 and 6)
15
(see Notes 5 and 6)
1.5
(see Notes 5 and 6)
2
f = 1 kHz
20
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.92 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20 Ω
IB(off) = -0.1 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3
µs
1
µs
PRODUCT INFORMATION
2
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