BD243 Просмотр технического описания (PDF) - Continental Device India Limited
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BD243 Datasheet PDF : 3 Pages
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BD243, BD243A, BD243B, BD243C
BD244, BD244A, BD244B, BD244C
Collector current
Collector current (Peak)
Base current
Total power dissipation upto TC=25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30 V
IB = 0; VCE = 60 V
VBE = 0; VCE = VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 6 A; IB = 1 A
Base emitter on voltage
IC = 6 A; VCE = 4 V
D.C. current gain
IC = 0.3 A; VCE = 4 V
IC = 3 A; VCE = 4 V
Small signal current gain
IC = 0.5A; VCE = 10V; f = 1 KHz
Transition frequency
IC = 0.5 A; VCE = 10 V; f = 1 MHz
IC
IC
IB
Ptot
Tj
Tstg
Rth j–c
max.
max.
max.
max.
max.
6.0
10
2.0
65
150
–65 to +150
1.92
A
A
A
W
°C
ºC
°C/W
243 243A 243B 243C
244 244A 244B 244C
ICEO
ICEO
ICES
max. 0.7 0.7 – – mA
max. – – 0.7 0.7 mA
max.
0.4
mA
IEBO
max.
1.0
mA
VCEO(sus)* min. 45
VCBO
min. 45
VEBO
min.
60 80 100 V
60 80 100 V
5.0
V
VCEsat* max.
1.5
VBE(on)* max.
2.0
hFE*
min.
30
hFE*
min.
15
hfe
min.
20
fT (1)
min.
3
V
V
MHz
* Pulse Test: Pulse width ≤ 300 µs; duty cycle ≤ 2%.
(1) fT = |hfe|• ftest
Continental Device India Limited
Data Sheet
Page 2 of 3
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