MPSA05 Просмотр технического описания (PDF) - Continental Device India Limited
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MPSA05 Datasheet PDF : 4 Pages
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPSA05,MPSA06
MPSA55,MPSA56
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Voltage
VCEO * IC=1mA,IB=0
MPSA05/55
60
MPSA06/56
80
Emitter-Base Voltage
VEBO IE=100uA, IC=0
4.0
Collector-Cut off Current
ICBO
MPSA05/55
VCB=60V, IE = 0
MPSA06/56
VCB=80V, IE = 0
Collector-Cut off Current
ICEO VCE=60V,IB =0
Collector-Emitter (sat) Voltage
VCE(sat) IC=100mA,IB=10mA
Base-Emitter(on) Voltage
VBE(on) IC=100mA,VCE=1V
DC Current Gain
hFE VCE=1V,IC=10mA
100
VCE=1V,IC=100mA
100
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
DYNAMIC CHARACTERISTICS
TYP
MAX
UNITS
V
V
V
0.1
uA
0.1
uA
0.1
uA
0.25
V
1.2
V
uA
MAX
UNITS
Transition Frequency
NPN fT** IC=10mA, VCE=2V
100
PNP
f=100MHz
IC=100mA, VCE=1V
50
f=100MHz
*Pulse Test : Pulse Width < 300us, Duty Cycle < 2%.
** fT is defined as the frequency at which IhfeI extrapolates to unity.
MHz
MHz
Continental Device India Limited
Data Sheet
Page 2 of 4
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