LND-TRM33 Просмотр технического описания (PDF) - Linear Dimensions Semiconductor
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LND-TRM33 Datasheet PDF : 6 Pages
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LND TRM33
LOW POWER 300 TO 500 MHz ASK TRANSMITTER
Theory of
operation
Electrical
characteristics
The LND TRM33 comprises three main elements:
1 Input buffer and modulator
2 Frequency synthesizer for generation of the RF
output carrier from a low frequency external
crystal
3 Power amplifier (PA) for driving an external
antenna
The IC accepts a digital CMOS input, and modu-
lates a fixed RF carrier frequency on or off
according to the digital input level. The RF carrier
is generated by the on-chip phase locked loop
(PLL) frequency synthesizer. This contains a
fixed divider which ensures that the RF output
frequency is 64 times the crystal reference
frequency. The power amplifier provides a
variable output level of up to 2 dBm of output
power depending upon the value of an external
resistor R1.
The PA has balanced outputs OUT1 and OUT2
which are in open collector configuration. A
balanced output is used since it provides a high
degree of suppression of even-order harmonics of
the fundamental. Odd order harmonic suppres-
sion is achieved using on-chip cancellation
techniques.
Table 1: Absolute maximum ratings
Parameter
Conditions
Supply voltage
Input voltage - Logic Inputs DATA & SBY pins
Input Current
DATA & SBY pins
Storage temperature
Junction temperature
Power Dissipation (SO16)
Symbol
VCC
Min
Max
Unit
-0.3
+7.0
V
-0.3V
VCC + 0.3V
-1.0
+1.0
mA
-40
150
°C
-40
150
°C
200
mW
Table 2: Operating conditions
@ 434 MHz; @ 318 MHz
Parameter
Symbol
Min
Max
Unit
Supply voltage
VCC
2.6
4.8
V
Ambient temperature
Ta
-40
65
°C
Note:
All specification parameters guaranteed only with the following components
(please refer to figure 2 for application circuit):
RF transformer
Crystal
Mini-Circuits TC4-14
Euroquartz B537 6.78-MHz crystal (Cload = 10 pF)
R1 = 3.9 k R2 = 3.3 k C7 = 1 nF C8 = 47 pF C1 = C2 = 22 pF
Table 3: DC Characteristics at 3.0V VCC and 23ºC ambient temperature
all parameters 100% production tested under these conditions unless otherwise stated
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Standby Current
SBY = low
Iccstb
0.1
1
µA
Supply Current
DATA = low
Icclow
16.5
mA
Supply Current
DATA = high, including open-collector
output currents
Icchigh
25
mA
DATA logic high level guaranteed by design
Vhigh 0.7*VCC
VCC+0.3V
DATA logic low level guaranteed by design
Vlow
-0.3V
0.3*VCC
DATA input current
guaranteed by design
-0.3 < Vin < Vcc+0.3
Idata
-10
+10
µA
Bias voltage on pin PS guaranteed by design
V(PS)
0.4
V
I(PS) = 100 µA
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