2N5550 Просмотр технического описания (PDF) - Continental Device India Limited
Номер в каталоге
Компоненты Описание
производитель
2N5550 Datasheet PDF : 4 Pages
| |||
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5550
TO-92
Plastic Package
High Voltage NPN Transistor For General Purpose and Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
VCEO
140
Collector Base Voltage
VCBO
160
Emitter Base Voltage
VEBO
6
Collector Current Continuous
IC
600
Power Dissipation@ Ta=25ºC
PD
625
Derate Above 25ºC
5.0
Power Dissipation@ Tc=25ºC
PD
1.5
Derate Above 25ºC
12
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Rth(j-a) (1)
357
Junction to case
Rth(j-c)
125
(1) Rth (j-a) is measured with the device soldered into a typical printed circuit board
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 4
Share Link: 