NTE2384 Просмотр технического описания (PDF) - NTE Electronics

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NTE2384

MOSFET N–Channel Enhancement Mode, High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics (Cont’d)

Internal Drain Inductance

LD

Measured from contact screw on –

5.0

–

nH

header closer to source pin and

center of die

Internal Source Inductance

LS Measured from the source lead

6mm from package to source

bonding pad

– 12.5 – nH

Source–Drain Diode Ratings and Characteristics

Continuous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovered Charge

IDR

IDRM

VSD

trr

Qrr

TC = +25°C

TC = +25°C

IF = 12A, VGS = 0, TJ = +25°C

IF = 6A, TJ = +25°C

VGS = 0, VR = 100V, TJ = +25°C,

diF/dt = 100A/µs,

–

–

6

A

–

–

24 A

– 1.1 1.5 V

– 1800 – ns

–

25

– µC

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

Source

.215 (5.45)

.430

(10.92)

.040 (1.02)

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Gate

.525 (13.35) R Max

Drain/Case

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