Q67000-S065 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

Q67000-S065

SIPMOS® Small-Signal Transistor

Infineon Technologies 

SP 0610L

Characteristics

at Tj = 25 ˚C, unless otherwise specified.

Total power dissipation Ptot = f (TA)

Safe operating area ID = f (VDS)

parameter: D = 0.01, TC = 25 ˚C

Typ. output characteristics ID = f (VDS)

parameter: tp = 80 µs

Typ. drain-source on-resistance

RDS(on) = f (ID)

parameter: VGS

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