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STGP10NB60SD Просмотр технического описания (PDF) - STMicroelectronics

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STGP10NB60SD Datasheet PDF : 12 Pages
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2 Electrical characteristics
STGP10NB60SD
Table 5. Switching On/Off (inductive load)
Symbol
Parameter
Test Conditions
td(on)
tr
(di/dt)on
tc
tr(Voff)
tf
tc
tr(Voff)
tf
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Cross-over Time
Off Voltage Rise Time
Current Fall Time
Cross-over Time
Off Voltage Rise Time
Current Fall Time
VCC = 480V, IC = 10A
RG= 1k, VGE= 15V, Tj= 25°C
(see Figure 18)
VCC = 480V, IC = 10A
RG= 1k, VGE= 15V,Tj= 25°C
(see Figure 18)
VCC = 480V, IC = 10A
RG= 1k, VGE= 15V, Tj=125°C
(see Figure 18)
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test Conditions
Eon Note 3
Eoff Note 4
Ets
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
VCC = 480V, IC = 10A
RG= 1k, VGE= 15V, Tj= 25°C
(see Figure 18)
Table 7. Collector-emitter diode
Symbol
Parameter
Test Conditions
IF
Forward Current
IFM
Forward Current pulsed
Vf
Forward On-Voltage
If = 3.5A
If = 3.5A, Tj = 125°C
trr
Reverse Recovery Time If = 7A ,VR = 35V,
Qrr
Reverse Recovery Charge Tj =125°C, di/dt = 100A/µs
Irrm
Reverse Recovery Current (see Figure 19)
Min.
Typ.
0.7
0.46
8
2.2
1.2
1.2
3.8
1.2
1.9
Max. Unit
ns
ns
A/µs
µs
µs
µs
µs
µs
µs
Min.
Typ.
0.6
5.0
5.6
Max. Unit
mJ
mJ
mJ
Min. Typ. Max. Unit
7
A
56
A
1.4
1.9
V
1.15
V
50
ns
70
nC
2.7
A
(1)Pulse width limited by max. junction temperature
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(3)Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a
co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
(4) Turn-off losses include also the tail of the collector current
(5) Calculated according to the iterative formula:
IC(TC) = R-----T----H-----J----–----C-----×-----TV----J-C-M---E---A-S----AX-----T-–---(-T-M---C---A-----X-----)--(--T----C----,---I--C----)-
4/12

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