STGP10NB60SD Просмотр технического описания (PDF) - STMicroelectronics

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STGP10NB60SD

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH™ IGBT

STMicroelectronics 

1 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VCES Collector-Emitter Voltage (VGS = 0)

IC Note 5 Collector Current (continuous) at TC = 25°C

IC Note 5 Collector Current (continuous) at TC = 100°C

ICM Note 1 Collector Current (pulsed)

VGE

Gate-Emitter Voltage

PTOT

Total Dissipation at TC = 25°C

Tstg

Storage Temperature

Tj

Operating Junction Temperature

Table 2. Thermal resistance

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

Rthc-sink Thermal resistance Case-sink Typ

STGP10NB60SD

Value

600

20

10

80

±20

31.5

– 65 to 150

4.7

62.5

0.5

Unit

V

A

A

W

A

W

°C

°C/W

°C/W

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