ECH8602M Просмотр технического описания (PDF) - ON Semiconductor
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ECH8602M Datasheet PDF : 7 Pages
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Ordering number : ENA1562A
ECH8602M
N-Channel Power MOSFET
30V, 6A, 30mΩ, Dual ECH8
http://onsemi.com
Features
• 2.5V drive
• Common-drain type
• Protection diode in
• Best suited for LiB charging and discharging switch
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
Unit
30
V
±12
V
6
A
60
A
1.4
W
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
8
5
ECH8602M-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TZ
TL
Lot No.
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/21710PE TKIM TC-00002221 No. A1562-1/7
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