TIP145 Просмотр технического описания (PDF) - Inchange Semiconductor
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TIP145 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
TIP145/146/147
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP145
TIP146
TIP147
CONDITIONS
IC=-30mA, IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-10mA
VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-40mA
VBEsat Base-emitter saturation voltage
IC=-10A ,IB=-40mA
VBE
Base-emitter on voltage
IC=-10A ; VCE=-4V
TIP145 VCB=-60V, IE=0
ICBO
Collector cut-off current TIP146 VCB=-80V, IE=0
TIP147 VCB=-100V, IE=0
TIP145 VCE=-30V, IB=0
ICEO
Collector cut-off current TIP146 VCE=-40V, IB=0
TIP147 VCE=-50V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
hFE-2
DC current gain
IC=-10A ; VCE=-4V
Switching times
td
Delay time
tr
Rise time
tstg
Storage time
tf
Fall time
VCC =-30 V, IC = -5.0 A,
IB =-20 mA Duty Cycle≤20%
IB1 = IB2, RC & RB Varied,
TJ = 25℃
MIN TYP. MAX UNIT
-60
-80
V
-100
-2.0
V
-3.0
V
-3.5
V
-3.0
V
-1
mA
-2
mA
1000
500
-2
mA
0.15
μs
0.55
μs
2.5
μs
2.5
μs
2
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