MTW16N40ED Просмотр технического описания (PDF) - ON Semiconductor

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MTW16N40ED

Power MOSFET 16 Amps, 400 Volts

ON Semiconductor 

MTW16N40E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 400 Vdc, VGS = 0 Vdc)

(VDS = 320 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Temperature Coefficient (Negative)

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 8.0 Adc)

Drain−Source On−Voltage (VGS = 10 Vdc)

(ID = 16 Adc)

(ID = 8.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 2.)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VDD = 200 Vdc, ID = 16 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 320 Vdc, ID = 16 Adc,

VGS = 10 Vdc)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1.)

(IS = 16 Adc, VGS = 0 Vdc)

(IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C)

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

Reverse Recovery Time

(See Figure 9)

Reverse Recovery Stored

Charge

(IS = 16 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

trr

ta

tb

QRR

LD

LS

Min

Typ

Max

Unit

400

−

−

420

−

Vdc

−

mV/°C

mAdc

−

−

0.25

−

−

1.0

−

−

100

nAdc

Vdc

2.0

3.0

4.0

−

7.0

−

mV/°C

−

0.225

0.24

Ohm

Vdc

−

−

4.8

−

−

4.3

8.0

10

−

mhos

−

2570 3600

pF

−

330

460

−

82

164

−

29

50

ns

−

62

70

−

76

170

−

57

95

−

66

93

nC

−

17

−

−

31

−

−

30

−

Vdc

−

1.0

1.6

−

0.9

−

−

340

−

ns

−

228

−

−

112

−

−

4.3

−

µC

−

5.0

−

nH

−

13

−

nH

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