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SMJ55166GB Просмотр технического описания (PDF) - Austin Semiconductor

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SMJ55166GB
Austin-Semiconductor
Austin Semiconductor Austin-Semiconductor
SMJ55166GB Datasheet PDF : 62 Pages
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SMJ55166
262144 BY 16-BIT
MULTIPORT VIDEO RAM
SGMS057C – APRIL 1995 – REVISED JUNE 1997
operation (continued)
Table 2. Terminal Description Versus Operational Mode
PIN
DRAM
TRANSFER
SAM
A0 – A8
Row, column address
Row address, tap point
CAS
Column-address strobe, DQ output enable
Tap-address strobe
DQ
DRAM data I/O, write mask
DSF
Block-write enable
Write-mask-register load enable
Color-register load enable
CBR (option reset)
Split-register-transfer enable
RAS
Row-address strobe
Row-address strobe
SE
SQ output enable,
QSF output enable
SC
Serial clock
SQ
Serial-data output
TRG
DQ output enable
Transfer enable
WEL
WEU
Write enable, write-per-bit enable
QSF
Serial-register status
NC/VSS Either make no external connection or tie to system VSS
VCC†
5-V supply
VSS†
Ground
For proper device operation, all VCC pins must be connected to a 5-V supply and all VSS pins must be tied to ground.
terminal definitions
address (A0 –A8)
Eighteen address bits are required to decode each of the 262 144 storage cell locations. Nine row-address bits
are set up on pins A0 – A8 and latched onto the chip on the falling edge of RAS. Nine column-address bits are
set up on pins A0 – A8 and latched onto the chip on the falling edge of CAS. All addresses must be stable on
or before the falling edge of RAS and the falling edge of CAS.
During the full-register-transfer read operation, the states of A0 –A8 are latched on the falling edge of RAS to
select one of the 512 rows where the transfer occurs. At the falling edge of CAS, the column-address bits A0 – A8
are latched. The most significant column-address bit (A8) selects which half of the row is transferred to the SAM.
The appropriate 8-bit column address (A0 – A7) selects one of 256 tap points (starting positions) for the
serial-data output.
During the split-register-transfer read operation, address bit A7 is ignored at the falling edge of CAS. An internal
counter selects which half of the register is used. If the high half of the SAM is currently in use, the low half of
the SAM is loaded with the low half of the DRAM half row and vice versa. Column address (A8) selects the DRAM
half row. The remaining seven address bits (A0 – A6) are used to select each of the 127 possible starting
locations within the SAM. Locations 127 and 255 are not valid tap points.
row-address strobe (RAS)
RAS is similar to a chip enable so that all DRAM cycles and transfer cycles are initiated by the falling edge of
RAS. RAS is a control input that latches the states of the row address, WEL, WEU, TRG, CAS, and DSF onto
the chip to invoke DRAM and transfer functions of the SMJ55166.
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