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SS110 Просмотр технического описания (PDF) - Guilin Strong Micro-Electronics Co., Ltd.

Номер в каталоге
Компоненты Описание
производитель
SS110
GSME
Guilin Strong Micro-Electronics Co., Ltd. GSME
SS110 Datasheet PDF : 2 Pages
1 2
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
RATINGS AND CHARACTERISTIC CURVES SS12 THRU SS110
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
0.8
Single Phase
Half Wave 60Hz
Resistive or
0.6
inductive Load
0.4
0.2
SS12-SS16
SS18-SS110
0
0
25
50
75
100 125 150
175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
TJ=25 C
10.0
1
0.1
SS12-SS14
SS15-SS16
SS18-SS110
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
400
200
TJ=25 C
20
2
0.1
SS12-SS14
SS15-SS110
1.0
10
100
REVERSE VOLTAGE,VOLTS
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
24
18
12
6 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=100 C
1
TJ=75 C
0.1
0.01
TJ=25 C
0.001 0
20
40
60
80
100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
t,PULSE DURATION,sec.
2

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